Electron Mobility Limited by Remote Charge Scattering in Thin (100)- and (110)-Oriented Silicon Body Double-Gated Metal-Oxide-Semiconductor Field-Effect Transistors with High-k Gate Dielectrics

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概要

• 論文の詳細を見る

著者

• Iijima Ryosuke

  Toshiba America Electronic Components, Inc., 257 Fuller Road, Albany, NY 12203, U.S.A.

• Takayanagi Mariko

  Toshiba America Electronic Components, Inc., 257 Fuller Road, Albany, NY 12203, U.S.A.

• Edge Lisa

  IBM Research at Albany Nanotech, 257 Fuller Road, Albany, NY 12203, U.S.A.

• Paruchuri Vamsi

  IBM Research at Albany Nanotech, 257 Fuller Road, Albany, NY 12203, U.S.A.

関連論文

• Characteristics of La2O3- and Al2O3-capped HfO2 dielectric metal-oxide-semiconductor field-effect transistors fabricated on (110)-oriented silicon substrates
• Electron Mobility Limited by Remote Charge Scattering in Thin (100)- and (110)-Oriented Silicon Body Double-Gated Metal-Oxide-Semiconductor Field-Effect Transistors with High-k Gate Dielectrics
• Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal--Oxide--Semiconductor Field-Effect Transistors
• Physical Mechanism of Threshold Voltage Modulation by Ge Channel Ion Implantation in the TiN/HfO2 Gate Stack Systems

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