Collective tunneling model in charge-trap-type nonvolatile memory cell (Special issue: Solid state devices and materials)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Takada Yukihiro
Univ. Tsukuba Tsukuba‐shi Jpn
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Sakurai Yoko
Graduate School Of Pure And Applied Science University Of Tsukuba
関連論文
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- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Theoretical Study of the Time-Dependent Phenomena on a Two-Dimensional Electron Gas Weakly Coupled with a Discrete Level
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- Collective tunneling model in charge-trap-type nonvolatile memory cell (Special issue: Solid state devices and materials)
- Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots
- Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor