Atomic structure and physical properties of epitaxial graphene islands embedded in SiC(0001) surfaces

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文

著者

• Nagase Masao

  Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation

• Hibino Hiroki

  Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation

関連論文

• Contact conductance measurement of locally suspended graphene on SiC
• Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
• Atomic structure and physical properties of epitaxial graphene islands embedded in SiC(0001) surfaces
• Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
• Contact Conductance Measurement of Locally Suspended Graphene on SiC
• Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
• Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
• Theoretical study on epitaxial graphene growth by Si sublimation from SiC(0001) surface

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