Contact conductance measurement of locally suspended graphene on SiC
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概要
著者
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Nagase Masao
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Hibino Hiroki
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
関連論文
- Contact conductance measurement of locally suspended graphene on SiC
- Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
- Atomic structure and physical properties of epitaxial graphene islands embedded in SiC(0001) surfaces
- Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
- Contact Conductance Measurement of Locally Suspended Graphene on SiC
- Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
- Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Theoretical study on epitaxial graphene growth by Si sublimation from SiC(0001) surface