Cross-Sectional Observation of LSI of 4M bit DRAM by High Resolution Transmission Electron Microscopy
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概要
著者
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SONG Minghui
Okayama University of Science
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Song Minghui
Advanced Nano Characterization Center National Institute For Materials Science
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Song Minghui
High Voltage Electron Microscopy Station National Institute For Materials Science
関連論文
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- Cross-Sectional Observation of LSI of 4M bit DRAM by High Resolution Transmission Electron Microscopy