Fabrication of Nanostructured ZnO Films for Transparent Field Emission Displays

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概要

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• A highly transparent field emitter was achieved by Ar⁺ion irradiation onto highly transparent and conducting ZnO films deposited on glass substrates. The as-deposited flat ZnO films before ion irradiation, which showed 90% transmittance and 186 \Omega/\square sheet resistance, showed no field emission current up to 15 V μm^-1. The ZnO film ion-irradiated at an ion-incidence angle of 45° showed nanocone structures about 200--400 nm in height and 6--8 μm^-2in number density. Since the nanocone size was less than the wavelength of visible light, the transmittance was maintained at 86% for the ion-irradiated ZnO film. The field emission properties of the ion-irradiated ZnO film revealed that a current density of 1 μA cm^-2was achieved at 6.2 V μm^-1, and that the field enhancement factor was calculated to be 2252 from the Fowler--Nordheim plot. Thus, the nanostructured ZnO film is believed to be promising as a transparent field emitter.

• 2013-11-25

著者

• Yusop Mohd

  Department Of Frontier Materials Nagoya Institute Of Technology

• Munisamy Subramanian

  Department of Frontier Materials, Graduate School of Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Tanemura Masaki

  Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology, Gokisho-cho, Showa-ku, Nagoya 466-8555, Japan

• Kalita Golap

  Department of Electronics and Information Engineering, Chubu University, Kasugai, Aichi 487-8501, Japan

• Zulkifli Zurita

  Department of Frontier Materials, Graduate School of Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan

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