Contactless Characterization of a Si Wafer with Terahertz Time-Domain Spectroscopy Using a Continuous-Wave Multimode Laser Diode
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概要
- 論文の詳細を見る
We demonstrate that the carrier density, scattering time, and wafer thickness of a doped Si wafer can be determined independently by measurement using a sub-THz spectroscopic system with an inexpensive continuous-wave multimode laser diode instead of a femtosecond laser. Because the THz signal spectrum of this system is almost discrete, we propose an improved algorithm for extracting these parameters from experimental data. We also demonstrate the two-dimensional imaging of the carrier-density distribution in the Si wafer.
- The Japan Society of Applied Physicsの論文
- 2013-11-25
著者
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Fujita Masami
Japan Coast Guard Academy
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Hangyo Masanori
Institute Of Laser Engineering Osaka University
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Fujita Masami
Japan Coast Guard Academy, Kure, Hiroshima 737-8512, Japan
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Morikawa Osamu
Japan Coast Guard Academy, Kure, Hiroshima 737-8512, Japan
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