Terahertz Emission Enhancement in InAs Thin Films Using a Silicon Lens Coupler
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概要
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Enhancement of the pulsed terahertz radiation generated from a lens-coupled InAs thin film excited by a femtosecond laser is reported. A Si hemispherical lens was used as a lens coupler and attached to the substrate-side of a 520-nm-thick InAs film, grown on a Si substrate. An enhancement factor of 7.5 times in the THz wave amplitude from the InAs film with the lens coupler was observed as compared with the bare InAs film. This enhancement is attributed to the improvement in the collimation condition of the radiated THz wave as it propagates through the index-matched lens coupler into free space.
- 2011-08-25
著者
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Hangyo Masanori
Institute Of Laser Engineering Osaka University
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Nakajima Makoto
Institute For Solid State Physics The University Of Tokyo
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Edamura Tadataka
Central Research Laboratories Hamamatsu Photonics K.k.
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Tani Masahiko
Research and Development Center, Stanley Electric Co., Ltd.
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Edamura Tadataka
Central Research Laboratory, Hamamatsu Photonics K.K., Hamamatsu 434-8601, Japan
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Nakajima Makoto
Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
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Que Christopher
Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507, Japan
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Hangyo Masanori
Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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