Low-Temperature Softening Due to Vacancy Orbital with \Gamma_{8} Quartet Ground State in Boron-Doped Floating Zone Silicon
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概要
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We have carried out low-temperature ultrasonic measurements using shear-mode ultrasound to clarify the quantum state of a vacancy orbital in boron-doped silicon grown by the floating zone (FZ) method. The elastic constants (C_{11}-C_{12})/2 and C_{44} of the transverse mode exhibit considerable softening below 2 and 5 K down to the base temperature of 30 mK, respectively. The elastic constant C_{44} measured by the three ultrasonic modes (k_{x},u_{y}), (k_{z},u_{x}), and (k_{x},u_{z}) shows the different magnetic field dependences among the configurations under applied magnetic fields along the z-axis. The elastic softening and the magnetic field dependence of the elastic constants are accounted for by the quadrupole susceptibility based on the energy level scheme of the vacancy orbital with a \Gamma_{8} quartet ground state and \Gamma_{7} doublet excited state located at an energy of 1 K. The difference in C_{44} between the two ultrasonic modes (k_{z},u_{x}) and (k_{x},u_{z}) at fields along the z-axis indicates that the \Gamma_{8} quartet ground state is slightly split by local strain in the silicon sample. The quantum state of the vacancy orbital is expected to be sensitive to strain because of the extremely large quadrupole-strain coupling energy of g_{\Gamma}\approx 10^{5} K due to the extensively spreading orbital radius of r\approx 1 nm. The differences in variation of the low-temperature softening and magnetic field dependence among eight samples cut out from different locations of the present boron-doped FZ silicon ingot evidence the inhomogeneous distribution of the vacancy concentration.
- 2013-08-15
著者
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Goto Terutaka
Graduate School Of Science And Technology Niigata University
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Nemoto Yuichi
Graduate School Of Science And Technology Niigata University
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Akatsu Mitsuhiro
Graduate School Of Science And Technology Niigata University
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MITSUMOTO Keisuke
Graduate School of Science and Technology, Niigata University, Niigata 950-2181, Japan
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Baba Shotaro
Graduate School of Science and Technology, Niigata University, Niigata 950-2181, Japan
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Yamada-Kaneta Hiroshi
Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan
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Horie Kunihiko
Graduate School of Science and Technology, Niigata University, Niigata 950-2181, Japan
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Komatsu Satoru
Graduate School of Science and Technology, Niigata University, Niigata 950-2181, Japan
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