Quadrupole Effects of Vacancy Orbital in Boron-Doped Silicon

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概要

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• We have investigated low-temperature properties at a longitudinal elastic constant C_{\text{L[111]}} of a boron-doped silicon crystal grown by a floating zone (FZ) method. The softening of C_{\text{L[111]}} depending on magnetic fields indicates that a magnetic charge state V^{+} of a vacancy orbital accommodating three electrons is stable. Appreciable anisotropy in the softening of C_{\text{L[111]}} at magnetic fields along the [111] and [1\bar{1}0] axes up to 10 T is described in terms of a quadrupole susceptibility for the vacancy orbital consisting of a \Gamma_{8} quartet ground state and \Gamma_{6} doublet excited state due to the spin--orbit interaction.

• 2011-09-15

著者

• Ogawa Takafumi

  Graduate School Of Natural Science And Technology And Faculty Of Engineering Okayama University

• Goto Terutaka

  Graduate School Of Science And Technology Niigata University

• Nemoto Yuichi

  Graduate School Of Science And Technology Niigata University

• Akatsu Mitsuhiro

  Graduate School Of Science And Technology Niigata University

• Watanabe Hajime

  Graduate School Of Agricultural Science Tohoku University:(present Office)faculty Of Agriculture Nii

• MITSUMOTO Keisuke

  Graduate School of Science and Technology, Niigata University, Niigata 950-2181, Japan

• Baba Shotaro

  Graduate School of Science and Technology, Niigata University, Niigata 950-2181, Japan

• Nagai Yuta

  Graduate School of Science and Technology, Niigata University, Niigata 950-2181, Japan

• Yamada-Kaneta Hiroshi

  Center for Quantum Materials Science, Niigata University, Niigata 950-2181, Japan

• Ogawa Takafumi

  Graduate School of Science and Technology, Niigata University, Niigata 950-2181, Japan

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