Pyramid Array InGaN/GaN Core--Shell Light Emitting Diodes with Homogeneous Multilayer Graphene Electrodes
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概要
- 論文の詳細を見る
Pyramid array InGaN/GaN core--shell light-emitting diodes (LEDs) were fabricated by using a highly homogeneous multilayer graphene transparent conducting electrode. This novel electrode exhibited excellent optical, structural, and electrical properties. In this design, graphene connected each pyramid array as a top window electrode. The current-driven pyramid array InGaN/GaN core--shell LED was operated at a low current injection and exhibited bright electroluminescence. Our results suggest that graphene offers excellent current spreading and transparent conductive properties for nano- or microscale devices.
- 2013-07-25
著者
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Li Xiao
Department Of Chemistry School Of Pharmacy Fourth Military Medical University
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Wang Guohong
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Li Xiao
Department of Mechanical Engineering, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Tsinghua University, Beijing 100084, China
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Kang Junjie
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Li Zhi
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Li Hongjian
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Liu Zhiqiang
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Yi Xiaoyan
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Ma Ping
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Zhu Hongwei
Department of Mechanical Engineering, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Tsinghua University, Beijing 100084, China
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Yi Xiaoyan
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Kang Junjie
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Li Xiao
Department of Cardiology, West China Hospital, Sichuan University, Sichuan Province, China
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Li Hongjian
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Wang Guohong
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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