Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well
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概要
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InGaN-based green light-emitting diodes (LEDs) with low-indium-composition shallow quantum well (SQW) inserted before the InGaN emitting layer are investigated theoretically and experimentally. Numerical simulation results show an increase of the overlap of electron--hole wave functions and a reduction of electrostatic field within the active region of the SQW LED, compared to those of the conventional LED. Photoluminescence (PL) measurements exhibit reduced full width at half maximum (FWHM) and increased PL intensity for the SQW LED. A 28.9% enhancement of output power at 150 mA for SQW LED chips of 256\times 300 μm<sup>2</sup>size is achieved.
- 2013-05-25
著者
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Li Jinmin
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Wang Guohong
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Li Jing
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Li Zhi
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Li Hongjian
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Yi Xiaoyan
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Kang Junjie
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Li Panpan
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Zhang Yiyun
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Li Zhicong
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Zhang Yiyun
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Li Hongjian
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Li Panpan
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Li Jing
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Wang Guohong
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Li Jinmin
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Li Zhi
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Li Zhicong
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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LI Jing
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences
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ZHANG Yiyun
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences
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LI Panpan
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences
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YI Xiaoyan
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences
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