Enhanced Light Emission of Light-Emitting Diodes with Silicon Oxide Nanobowls Photonic Crystal without Electrical Performance Damages
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概要
- 論文の詳細を見る
Unencapsulated GaN-based light-emitting diodes (LEDs) with two-dimensional (2D) hexagonal closely-packed silicon oxide nanobowls photonic crystal (PhC) on the indium tin oxide (ITO) transparent conductive layer were fabricated by using polystyrene spheres and sol--gel process. Compared to conventional LEDs with planar ITO layers, the light output power of 600-nm-lattice PhC LEDs was improved by 25.6% at an injection current of 20 mA. Furthermore, electrical performance of the PhC LEDs was damage-free via this chemical technique.
- 2013-04-25
著者
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Wang Junxi
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Wei Tongbo
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Geng Chong
Department of Chemistry, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China
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Zhang Yiyun
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Li Jinmin
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Du Chengxiao
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Zheng Haiyang
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Chen Yu
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Wu Kui
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Yan Qingfeng
Department of Chemistry, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China
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ZHANG Yiyun
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences
関連論文
- Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers
- Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres
- Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well
- Enhanced Light Emission of Light-Emitting Diodes with Silicon Oxide Nanobowls Photonic Crystal without Electrical Performance Damages