Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres
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概要
- 論文の詳細を見る
In this study, enhanced light output power in GaN-based light-emitting diodes (LEDs) with a nanotextured indium tin oxide (ITO) transparent conductive layer was observed. Wafer-scale self-assembled cesium chloride nanospheres were formed on the ITO transparent conductive layer and served as the mask in a dry etching process. After the inductively coupled plasma (ICP) etching process, nanoscale islands were fabricated on the ITO layer. Compared with LEDs with a planar ITO layer, the light output power of LEDs with a nanotextured ITO layer was improved by 23.4%. Optoelectronic measurement showed that the performance of the fabricated LEDs was greatly enhanced.
- 2012-02-25
著者
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Wei Tongbo
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Wang Guohong
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Liu Jing
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
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Li Jing
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Yi Xiaoyan
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Zhang Yiyun
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Zhang Yiyun
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Yi Futing
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
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Li Jing
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Wang Guohong
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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LI Jing
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences
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ZHANG Yiyun
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences
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YI Xiaoyan
Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences
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