Study Trapped Charge Distribution in P-Channel Silicon--Oxide--Nitride--Oxide--Silicon Memory Device Using Dynamic Programming Scheme

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概要

• 論文の詳細を見る

• In this study, we precisely investigate the charge distribution in SiN layer by dynamic programming of channel hot hole induced hot electron injection (CHHIHE) in p-channel silicon--oxide--nitride--oxide--silicon (SONOS) memory device. In the dynamic programming scheme, gate voltage is increased as a staircase with fixed step amplitude, which can prohibits the injection of holes in SiN layer. Three-dimensional device simulation is calibrated and is compared with the measured programming characteristics. It is found, for the first time, that the hot electron injection point quickly traverses from drain to source side synchronizing to the expansion of charged area in SiN layer. As a result, the injected charges quickly spread over on the almost whole channel area uniformly during a short programming period, which will afford large tolerance against lateral trapped charge diffusion by baking.

• 2013-04-25

著者

• Chiu Yung-Yueh

  Institute of Communications Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Li Fu-Hai

  Institute of Communications Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Lee Yen-Hui

  Institute of Communications Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Chang Ru-Wei

  Institute of Communications Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Yang Bo-Jun

  Institute of Communications Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Sun Wein-Town

  SONOS Technology Research Program, eMemory Technology Inc., Jhube, Hsinchu 302, Taiwan

• Lee Eric

  SONOS Technology Research Program, eMemory Technology Inc., Jhube, Hsinchu 302, Taiwan

• Kuo Chao-Wei

  SONOS Technology Research Program, eMemory Technology Inc., Jhube, Hsinchu 302, Taiwan

• Shirota Riichiro

  Institute of Communications Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

関連論文

• Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal--Oxide--Semiconductor Field-Effect-Transistor Devices
• Study Trapped Charge Distribution in P-Channel Silicon--Oxide--Nitride--Oxide--Silicon Memory Device Using Dynamic Programming Scheme
• Impact of Source/Drain Junction and Cell Shape on Random Telegraph Noise in NAND Flash Memory

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