Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal--Oxide--Semiconductor Field-Effect-Transistor Devices

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概要

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• In this work, we explore for the first time dual-material gate (DMG) and inverse DMG devices for suppressing the random-dopant (RD)-induced characteristic fluctuation in 16 nm metal--oxide--semiconductor field-effect-transistor (MOSFET) devices. The physical mechanism of suppressing the characteristic fluctuation of DMG devices is observed and discussed. The achieved improvement in suppressing the RD-induced threshold voltage, on-state current, and off-state current fluctuations are 28, 12.3, and 59%, respectively. To further suppress the fluctuations, an approach that combines the DMG method and channel-doping-profile engineering is also advanced and explored. The results of our study show that among the suppression techniques, the use of the DMG device with an inverse lateral asymmetric channel-doping-profile has good immunity to fluctuation.

• 2011-04-25

著者

• Li Yiming

  Institute of Communications Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Lee Kuo-Fu

  Institute of Communications Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Yiu Chun-Yen

  Institute of Communications Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Chiu Yung-Yueh

  Institute of Communications Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Chang Ru-Wei

  Department of Electrical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

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• Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal--Oxide--Semiconductor Field-Effect-Transistor Devices
• Comparative Study of Multigate and Multifin Metal–Oxide–Semiconductor Field-Effect Transistor
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