Impact of Deposition Temperature of the Silicon Oxide Passivation on the Performance of Indium Zinc Oxide Thin-Film Transistors
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概要
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Indium zinc oxide (IZO) thin-film transistors (TFTs) with SiO2 passivation deposited by plasma-enhanced chemical vapor deposition (PECVD) were fabricated. The impact of deposition temperature of the SiO2 passivation on the performance of the IZO-TFTs was investigated. It is found that the hydrogen content in the IZO film increases and the number of oxygen vacancies decreases as the SiO2 deposition temperature increases. The IZO-TFTs with SiO2 deposited at temperature higher than 230 °C show high conductive, and those with SiO2 deposited at temperature lower than 210 °C are less stable under positive bias stress (PBS). X-ray photoelectron spectroscopy (XPS) dept profile experiments show that IZO films covered by SiO2 deposited at lower temperature have larger amount of loosely bound oxygen impurities which act as acceptor-type traps. We propose that the origin of the positive V_{\text{on}} shift under PBS is the electrons trapped by the loosely bound oxygen impurities generated during the deposition of the SiO2 passivation.
- 2012-07-25
著者
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Li Min
State Key Lab. Of Natural And Biomimetic Drugs Peking Univ.
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Xu Hua
State Key Laboratory Of Soil And Sustainable Agriculture Institute Of Soil Science Chinese Academy O
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Luo Dongxiang
State Key Laboratory of Luminescent Materials and Devices (South China University of Technology), Guangzhou 510640, China
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Lan Linfeng
State Key Laboratory of Luminescent Materials and Devices (South China University of Technology), Guangzhou 510640, China
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Xu Miao
State Key Laboratory of Luminescent Materials and Devices (South China University of Technology), Guangzhou 510640, China
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Xiong Nana
State Key Laboratory of Luminescent Materials and Devices (South China University of Technology), Guangzhou 510640, China
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Peng Junbiao
State Key Laboratory of Luminescent Materials and Devices (South China University of Technology), Guangzhou 510640, China
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Li Min
State Key Laboratory of Luminescent Materials and Devices (South China University of Technology), Guangzhou 510640, China
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Xu Hua
State Key Laboratory of Luminescent Materials and Devices (South China University of Technology), Guangzhou 510640, China
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