Development of High-Speed Copper Chemical Mechanical Polishing Slurry for Through Silicon Via Application Based on Friction Analysis Using Atomic Force Microscope

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概要

• 論文の詳細を見る

• In order to obtain a high-speed copper chemical mechanical polishing (CMP) process for through silicon vias (TSV) application, we developed a new Cu CMP slurry through friction analysis of Cu reaction layer by an atomic force microscope (AFM) technique. A lateral modulation friction force microscope (LM-FFM) is able to measure the friction value properly giving a vibration to the layer. We evaluated the torsional displacement between the probe of the LM-FFM and the Cu reaction layer under a 5 nm vibration to cancel the shape effect of the Cu reaction layer. The developed Cu CMP slurry forms a frictionally easy-removable Cu reaction layer.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2011-05-25

著者

• Amanokura Jin

  Semiconductor Materials Division, Hitachi Chemical Co., Ltd., Hitachi, Ibaraki 317-8555, Japan

• Ono Hiroshi

  Semiconductor Materials Division, Hitachi Chemical Co., Ltd., Hitachi, Ibaraki 317-8555, Japan

• Hombo Kyoko

  Materials Research Laboratory, Hitachi Ltd., Hitachi, Ibaraki 319-1292, Japan

関連論文

• Development of High-Speed Copper Chemical Mechanical Polishing Slurry for Through Silicon Via Application Based on Friction Analysis Using Atomic Force Microscope

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