Systematic Control of Doped Carrier Density without Disorder at Interface of Oxide Heterostructures
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概要
- 論文の詳細を見る
We propose a method of systematically controlling carrier densities at the interface of transition metal oxide heterostructures without introducing disorders. By inserting nonpolar layers sandwiched by polar layers, continuous carrier doping into the interface can be realized. This method enables us to control total carrier density per unit cell systematically up to high values on the order of unity.
- Physical Society of Japanの論文
- 2010-03-15
著者
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Imada Masatoshi
Department Of Applied Physics University Of Tokyo
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Hirayama Motoaki
Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Hirayama Motoaki
Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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