Molecular Dynamics of Ion Incident Angle Dependence of Sputtering Yield in Chlorine-Adsorbed GaN Crystal
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概要
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A molecular dynamics simulation has been carried out to investigate the dependence of chemical sputtering yield on the ion incident angle in the wurtzite-type GaN(0001) surface with a Cl-adsorbed layer. The sputtering yields of both Ga and N atoms show only a weak dependence on ion incident angle for the range of 60 to 90° (normal incidence). Ga is chemically sputtered mostly in the form of Ga--Cl<sub>2</sub>, and sometimes in the form of Ga--Cl, Ga--Cl<sub>3</sub>, Ga<sub>x</sub>N<sub>y</sub>, and Ga<sub>x</sub>N<sub>y</sub>Cl<sub>z</sub>. These products escape from the surface in the time range of mainly 200--500 fs after the impact of the incident Ar ion. There are small amounts of products escaping in the time range of 500--5000 fs.
- 2011-08-25
著者
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Harafuji Kenji
Department Of Nuclear Engineering Faculty Of Engineering Tohoku University
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Kawamura Katsuyuki
Department Of Earth And Planetary Science Tokyo Institute Of Technology
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Kawamura Katsuyuki
Department of Earth and Planetary Science, Tokyo Institute of Technology, Meguro, Tokyo 152-8551, Japan
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Harafuji Kenji
Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
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Harafuji Kenji
Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
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