Effect of Porous Counter Electrode with Highly Conductive Layer on Dye-Sensitized Solar Cells
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概要
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A Pt/porous titanium (Ti)/dense Ti/aluminum (Al)/glass composite counter electrode for a dye-sensitized solar cell (DSC) was fabricated and characterized. The introduction of a highly conductive Al film drastically reduced the sheet resistance of the counter electrode to improve the short circuit current and fill factor of the DSC. Porous and dense Ti layers were deposited by the DC magnetron sputtering process. The dense Ti layer protected the Al film from dissolution in the electrolyte solution to stabilize the composite counter electrode. The porous Ti layer with a larger electrochemical active area at the electrolyte/counter electrode interface mainly improved the short circuit current of the DSC. The results indicate the importance of the introduction of porous materials with highly conductive films into the counter electrode of a DSC and the suitability of composite materials of Al and Ti for the counter electrode.
- 2011-08-25
著者
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KIMURA Yasuo
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Toho
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NIWANO Michio
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Toho
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Rahman Mohammad
Laboratory Of Function And Morphology Department Of Animal Science Faculty Of Agriculture Utsunomiya
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Ma Teng
Laboratory Of Medical Immunology School Of Basic Medical Science Peking University Health Science Ce
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Kimura Yasuo
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Kojima Ryota
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Fihry Mehdi
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Tadaki Daisuke
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Fihry Mehdi
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Rahman Mohammad
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Niwano Michio
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Kojima Ryota
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Rahman Mohammad
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Ma Teng
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Kimura Yasuo
Laboratory for Nanoelectronics and Spinelectronics, Research Institute of Electrical Communication, Tohoku University
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Ma Teng
Laboratory for Nanoelectronics and Spinelectronics, Research Institute of Electrical Communication, Tohoku University
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Niwano Michio
Laboratory for Nanoelectronics and Spinelectronics, Research Institute of Electrical Communication, Tohoku University
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Tadaki Daisuke
Laboratory for Nanoelectronics and Spinelectronics, Research Institute of Electrical Communication, Tohoku University
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