Electrical Investigation of Notch Width Dependence of Domain Wall Structure in Co/Ni Nanowires
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概要
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We have investigated the notch width dependence of the domain wall structure by measuring the wall resistances in Co/Ni nanowires with perpendicular magnetization. Wall resistance was abruptly increased below a notch width of 43 nm. By comparing the experimental results with theoretical calculations of wall resistance and the micromagnetic simulation of wall energy, this increase in wall resistance was found to be caused by the change in the wall structure from the Bloch to Néel wall caused by the decreased notch width.
- 2011-07-25
著者
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NAKATANI Yoshinobu
University of Electro-Communications
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Ono Teruo
Institute For Chemical Research Kyoto University
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Kondou Kouta
Institute For Chemical Research Kyoto University
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Koyama Tomohiro
Institute For Chemical Research Kyoto University
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Chiba Daichi
Institute For Chemical Research Kyoto University
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Ishiwata Nobuyuki
Green Innovation Research Laboratories, NEC Corporation, Sagamihara 252-5298, Japan
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Hiramatsu Ryo
Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan
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Fukami Shunsuke
Green Innovation Research Laboratories, NEC Corporation, Sagamihara 252-5298, Japan
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Koyama Tomohiro
Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan
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Kondou Kouta
Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan
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