Current-Controlled Magnetization Dynamics in the Spin-Flip Transistor
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概要
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The current driven magnetization dynamics of a thin-film, three magnetic terminal device (spin-flip transistor) is investigated theoretically. We consider a magnetization configuration in which all magnetizations are in the device plane, with source–drain magnetizations chosen fixed and antiparallel, whereas the third contact magnetization is allowed to move in a weak anisotropy field that guarantees thermal stability of the equilibrium structure at room temperature. We analyze the magnetization dynamics of the free layer under a dc source–drain bias current within the macrospin model and magneto-electronic circuit theory. A new tunable two-state behavior of the magnetization is found and the advantages of this phenomenon and potential applications are discussed.
- 2006-05-15
著者
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Ono Teruo
Institute For Chemical Research Kyoto University
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Wang Xuhui
Kavli Institute of NanoScience, Delft University of Technology, 2628 CJ Delft, The Netherlands
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Bauer Gerrit
Kavli Institute of NanoScience, Delft University of Technology, 2628 CJ Delft, The Netherlands
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