Effect of Lattice Strain and Improvement of the Piezoelectric Properties of (K,Na)NbO3 Lead-Free Film
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概要
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(K,Na)NbO3 (KNN) films with very high transverse piezoelectric coefficient $d_{31}$, which attained values comparable to those of Pb(Zr,Ti)O3 (PZT) films for the first time, were successfully deposited on Pt/Ti/SiO2/Si $\phi$ 4-in. substrates by RF magnetron sputtering. These films were polycrystalline and had pseudo-cubic perovskite structure with a $\langle 001\rangle$ preferred orientation. Furthermore, we focused on the effect of lattice strain on $d_{31}$ of KNN to clarify the relationship between the piezoelectric properties and structural parameters apart from orientation. We found that $-d_{31}$ increases with decreasing lattice strain $c/a$ ratio of KNN when the in-plane lattice parameter $a$ increases and the out-of-plane lattice parameter $c$ decreases. By controlling the lattice strain $c/a$ ratio strictly and maintaining a homogeneous strain, we achieved a high $d_{31}$ (${\sim}{-}100$ pm/V) that can be uniformized on $\phi$ 4-in. substrates and with a standard deviation that decreases to about 4 pm/V.
- 2010-09-25
著者
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Shibata Kenji
Advanced Electronic Materials Research Department Research And Development Laboratory Hitachi Cable
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Suenaga Kazufumi
Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cabl
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Watanabe Kazutoshi
Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cabl
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Horikiri Fumimasa
Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cabl
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Mishima Tomoyoshi
Advanced Electronic Materials Research Department Research And Development Laboratory Hitachi Cable
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Nomoto Akira
Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cable, Ltd., 3550 Kidamari, Tsuchiura, Ibaraki 300-0026, Japan
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Watanabe Kazutoshi
Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cable, Ltd., 3550 Kidamari, Tsuchiura, Ibaraki 300-0026, Japan
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Horikiri Fumimasa
Advanced Electronic Materials Research Department, Research and Development Laboratory, Hitachi Cable, Ltd., 3550 Kidamari, Tsuchiura, Ibaraki 300-0026, Japan
関連論文
- Piezoelectric Properties of (K,Na)NbO_3 Films Deposited by RF Magnetron Sputtering
- Flux Pinning Characteristics in Tl Series Superconductors
- Improvement of Piezoelectric Properties of (K,Na)NbO3 Films Deposited by Sputtering
- Evaluation of Crystal Orientation for (K,Na)NbO Films Using X-ray Diffraction Reciprocal Space Map and Relationship between Crystal Orientation and Piezoelectric Coefficient
- Effect of Lattice Strain and Improvement of the Piezoelectric Properties of (K,Na)NbO3 Lead-Free Film
- Curie Temperature, Biaxial Elastic Modulus, and Thermal Expansion Coefficient of (K,Na)NbO3 Piezoelectric Thin Films
- Crystalline Structure of Highly Piezoelectric (K,Na)NbO3 Films Deposited by RF Magnetron Sputtering