Effect of Oxygen Precipitation in Nitrogen-Doped Annealed Silicon Wafers on Thermal Strain Induced by Rapid Thermal Processing
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概要
- 論文の詳細を見る
We have studied the effect of oxygen precipitation in annealed silicon wafers on the thermal strain induced during rapid thermal processing (RTP), focusing on the density of oxygen precipitates. It was found that the strain decreased with an increase in the precipitate density. Furthermore, the strain was drastically suppressed when the density of oxygen precipitates (average size: 80 nm) was greater than $1.5 \times 10^{10}$ cm-3. This is interpreted as “precipitation hardening” against dislocation movements during RTP.
- 2010-08-25
著者
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Kashima Kazuhiko
Technical Application Silicon Division Toshiba Ceramics Co. Ltd.
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Araki Koji
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Isogai Hiromichi
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Izunome Koji
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Sudo Haruo
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Aoki Tatsuhiko
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Senda Takeshi
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Tsubota Hiroyuki
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Miyashita Moriya
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Matsumura Hisashi
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Saito Hiroyuki
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Maeda Susumu
Technology Development Center, Covalent Materials Corporation, 30 Soya, Hadano, Kanagawa 257-8566, Japan
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Kashima Kazuhiko
Technology Development Center, Covalent Materials Corporation, 30 Soya, Hadano, Kanagawa 257-8566, Japan
関連論文
- Intrinsic Gettering In Nitrogen Doped and Hydrogen Annealed Czochralski-Grown Silicon Wafers
- Effect of Hydrogen Termination on Surface Roughness Variation of Si(110) by Reflow Oxidation during High-Temperature Ar Annealing
- Effect of Oxygen Precipitation in Nitrogen-Doped Annealed Silicon Wafers on Thermal Strain Induced by Rapid Thermal Processing
- Intrinsic Gettering in Nitrogen-Doped and Hydrogen-Annealed Czochralski-Grown Silicon Wafers