Kashima Kazuhiko | Technical Application Silicon Division Toshiba Ceramics Co. Ltd.
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概要
- KASHIMA Kazuhikoの詳細を見る
- 同名の論文著者
- Technical Application Silicon Division Toshiba Ceramics Co. Ltd.の論文著者
関連著者
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Kashima Kazuhiko
Technical Application Silicon Division Toshiba Ceramics Co. Ltd.
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PAN Lian-Sheng
R&D Center, Toshiba Ceramics Co., Ltd.
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TANAKA Masafumi
R&D Center, Toshiba Ceramics Co., Ltd.
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Goto Hiroyuki
Silicon Development Silicon Division Toshiba Ceramics Co. Ltd.
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Goto H
Silicon Development Silicon Division Toshiba Ceramics Co. Ltd.
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GOTO Hiroyuki
Silicon Development, Silicon Division, Toshiba Ceramics Co., Ltd.
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KASHIMA Kazuhiko
Technical application, Silicon Division, Toshiba Ceramics Co., Ltd.
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Pan Lian-sheng
R&d Center Toshiba Ceramics Co. Ltd.
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Tanaka Masafumi
R&d Center Toshiba Ceramics Co. Ltd.
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Araki Koji
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Isogai Hiromichi
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Izunome Koji
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Sudo Haruo
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Aoki Tatsuhiko
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Senda Takeshi
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Tsubota Hiroyuki
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Miyashita Moriya
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Matsumura Hisashi
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Saito Hiroyuki
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Maeda Susumu
Technology Development Center, Covalent Materials Corporation, 30 Soya, Hadano, Kanagawa 257-8566, Japan
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Kashima Kazuhiko
Technology Development Center, Covalent Materials Corporation, 30 Soya, Hadano, Kanagawa 257-8566, Japan
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Kashima Kazuhiko
Technical application, Silicon Division, Toshiba Ceramics Co., Ltd., 5-25 Nishi-Shinjuku 7-chome, Shinjuku-ku, Tokyo 160-0023, Japan
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Tanaka Masafumi
R&D Center, Toshiba Ceramics Co., Ltd., 30 Soya, Hadano, Kanagawa 257-8566, Japan
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Pan Lian-Sheng
R&D Center, Toshiba Ceramics Co., Ltd., 30 Soya, Hadano, Kanagawa 257-8566, Japan
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Goto Hiroyuki
Silicon Development, Silicon Division, Toshiba Ceramics Co., Ltd., 6-861-5 Higashikou, Seirou-machi, Kitakanbara-gun, Niigata 957-0197, Japan
著作論文
- Intrinsic Gettering In Nitrogen Doped and Hydrogen Annealed Czochralski-Grown Silicon Wafers
- Effect of Oxygen Precipitation in Nitrogen-Doped Annealed Silicon Wafers on Thermal Strain Induced by Rapid Thermal Processing
- Intrinsic Gettering in Nitrogen-Doped and Hydrogen-Annealed Czochralski-Grown Silicon Wafers