Intrinsic Gettering In Nitrogen Doped and Hydrogen Annealed Czochralski-Grown Silicon Wafers
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Goto H
Silicon Development Silicon Division Toshiba Ceramics Co. Ltd.
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GOTO Hiroyuki
Silicon Development, Silicon Division, Toshiba Ceramics Co., Ltd.
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KASHIMA Kazuhiko
Technical application, Silicon Division, Toshiba Ceramics Co., Ltd.
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PAN Lian-Sheng
R&D Center, Toshiba Ceramics Co., Ltd.
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TANAKA Masafumi
R&D Center, Toshiba Ceramics Co., Ltd.
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Pan Lian-sheng
R&d Center Toshiba Ceramics Co. Ltd.
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Kashima Kazuhiko
Technical Application Silicon Division Toshiba Ceramics Co. Ltd.
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Goto Hiroyuki
Silicon Development Silicon Division Toshiba Ceramics Co. Ltd.
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Tanaka Masafumi
R&d Center Toshiba Ceramics Co. Ltd.
関連論文
- Intrinsic Gettering in Nitrogen-Doped and Hydrogen-Annealed Czochralski-Grown Silicon Wafers
- Intrinsic Gettering In Nitrogen Doped and Hydrogen Annealed Czochralski-Grown Silicon Wafers
- Effect of Oxygen Precipitation in Nitrogen-Doped Annealed Silicon Wafers on Thermal Strain Induced by Rapid Thermal Processing
- Intrinsic Gettering in Nitrogen-Doped and Hydrogen-Annealed Czochralski-Grown Silicon Wafers