Intrinsic Gettering in Nitrogen-Doped and Hydrogen-Annealed Czochralski-Grown Silicon Wafers
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-06-01
著者
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Goto H
Silicon Development Silicon Division Toshiba Ceramics Co. Ltd.
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GOTO Hiroyuki
Silicon Development, Silicon Division, Toshiba Ceramics Co., Ltd.
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PAN Lian-Sheng
R & D Center, Toshiba Ceramics Co., Ltd.
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TANAKA Masafumi
R & D Center, Toshiba Ceramics Co., Ltd.
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KASHIMA Kazuhiko
Technical application, Silicon Division, Toshiba Ceramics Co., Ltd.
関連論文
- Intrinsic Gettering in Nitrogen-Doped and Hydrogen-Annealed Czochralski-Grown Silicon Wafers
- Intrinsic Gettering In Nitrogen Doped and Hydrogen Annealed Czochralski-Grown Silicon Wafers