Izunome Koji | Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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概要
- Izunome Kojiの詳細を見る
- 同名の論文著者
- Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japanの論文著者
関連著者
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Isogai Hiromichi
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Izunome Koji
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Araki Koji
Department Of Applied Chemistry Faculty Of Engineering Kyushu Institute Of Technology
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Kashima Kazuhiko
Technical Application Silicon Division Toshiba Ceramics Co. Ltd.
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Araki Koji
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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Araki Koji
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Zhao Xinwei
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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Takeda Ryuji
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Matsushita Yoshiaki
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Sudo Haruo
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Aoki Tatsuhiko
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Senda Takeshi
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Tsubota Hiroyuki
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Miyashita Moriya
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Matsumura Hisashi
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Saito Hiroyuki
Principle Technology, Covalent Silicon Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Maeda Susumu
Technology Development Center, Covalent Materials Corporation, 30 Soya, Hadano, Kanagawa 257-8566, Japan
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Kashima Kazuhiko
Technology Development Center, Covalent Materials Corporation, 30 Soya, Hadano, Kanagawa 257-8566, Japan
著作論文
- Effect of Hydrogen Termination on Surface Roughness Variation of Si(110) by Reflow Oxidation during High-Temperature Ar Annealing
- Effect of Oxygen Precipitation in Nitrogen-Doped Annealed Silicon Wafers on Thermal Strain Induced by Rapid Thermal Processing