Turn-Around Phenomenon in the Degradation Trend of n-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistors under DC Bias Stress
スポンサーリンク
概要
- 論文の詳細を見る
In this research, the instability of n-type low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS TFTs) is investigated under DC bias stress and a unique phenomenon is observed. At a large gate stressing voltage and simultaneous low to moderate drain biasing voltages operating in a linear region, a turn-around phenomenon is observed in the on-current ($I_{\text{on}}$) degradation trend of the TFT characteristics, resulting from the increase in maximum transconductance ($G_{\text{m,max}}$). However, under a larger drain stressing voltage, the turn-around phenomenon of the $I_{\text{on}}$ degradation trend is observed to disappear owing to the extensive increases in threshold voltage ($V_{\text{th}}$) and trap state density ($N_{\text{trap}}$) in a channel, which cause the TFTs to deteriorate monotonically.
- 2010-07-25
著者
-
Liu Han-wen
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
-
Wang Fang-Hsing
Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, 250 Kuo Kuang Rd., Taichung 402, Taiwan
-
Wang Fang-Hsing
Department of Electrical Engineering and Institute of Electrical Engineering, and Graduate Institute of Optoelectric Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.
-
Chiou Si-Ming
Department of Electrical Engineering and Institute of Electrical Engineering, and Graduate Institute of Optoelectric Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.
-
Liu Han-Wen
Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.
-
Chiou Si-Ming
Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.
関連論文
- Effects of Rapid Thermal Annealing on Cobalt Silicided p^+ poly-Si Gates Fabricated by BF^+_2 Implantation into Bilayered CoSi/a-Si Films
- High-Performance Superthin Oxide/Nitride/Oxide Stacked Dielectrics Formed by Low-Pressure Oxidation of Ultrathin Nitride
- Turn-Around Phenomenon in the Degradation Trend of n-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistors under DC Bias Stress
- Characteristics and Optical Properties of Ni Nanograins Reduced on TiO2 Film
- Superior Reliability of Gate-All-Around Polycrystalline Silicon Thin-Film Transistors with Vacuum Cavities Next to Gate Oxide Edges