Chiou Si-Ming | Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.
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概要
- Chiou Si-Mingの詳細を見る
- 同名の論文著者
- Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.の論文著者
関連著者
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Wang Fang-Hsing
Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, 250 Kuo Kuang Rd., Taichung 402, Taiwan
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Chiou Si-Ming
Department of Electrical Engineering and Institute of Electrical Engineering, and Graduate Institute of Optoelectric Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.
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Liu Han-Wen
Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.
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Chiou Si-Ming
Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.
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Liu Han-wen
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Gong Jeng
Institute Of Electronic Engineering National Tsing Hua University
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Wang Fang-Hsing
Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.
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Wang Fang-Hsing
Department of Electrical Engineering and Institute of Electrical Engineering, and Graduate Institute of Optoelectric Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.
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Huang Hui-Ching
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
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Gong Jeng
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
著作論文
- Turn-Around Phenomenon in the Degradation Trend of n-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistors under DC Bias Stress
- Superior Reliability of Gate-All-Around Polycrystalline Silicon Thin-Film Transistors with Vacuum Cavities Next to Gate Oxide Edges