Synchrotron X-ray Diffraction Study of Single-Phase $\beta$-AlN Thin Films Heteroepitaxially Grown on Sapphire (0001) Substrates by Pulsed Laser Deposition

概要

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$\beta$-AlN films grown on sapphire (0001) substrates by pulsed laser deposition were crystallographically evaluated by X-ray diffraction using synchrotron radiation at the SAGA Light Source. A $\theta$–$2\theta$ measurement suggested that single-phase $\beta$-AlN was grown. From measurements of $\beta$-AlN $1\bar{1}1$ diffraction spots, it was found that $\beta$-AlN with a lattice constant of $7.90\pm 0.06$ Å was heteroepitaxially grown on the substrate with a relationship of $\beta$-AlN(111)[$1\bar{2}1$] $\parallel$ Al2O3(0001)[$11\bar{2}$0]. The film was composed of highly-oriented $\beta$-AlN crystallites with an average diameter of about 100 Å.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2010-02-25