InGaN-Based Blue-Violet Laser Diodes Using AlN as the Electrical Insulator

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概要

• 論文の詳細を見る

• We report on a method for using aluminium nitride (AlN) as the electrical insulator in ridge waveguide blue-violet laser diodes (LDs). The AlN layer is deposited by molecular beam epitaxy, with good sidewall conformality. The slope efficiency (0.66 W/A for uncoated facets) and leakage current (100 pA) of $1.9\times 700$ μm2 devices fabricated using this method are as good as those of conventional LDs with SiO2 insulator. The threshold current is 57 mA compared to 53 mA for SiO2 LDs, accounted for by the higher refractive index of AlN. Self-consistent LD simulations show that a reduction in junction temperature compared to conventional SiO2 LDs is achievable.

• 2009-07-25

著者

• BOUSQUET Valerie

  Sharp Laboratories of Europe Ltd.

• KAUER Matthias

  Sharp Laboratories of Europe Ltd.

• Takahashi Koji

  Advanced Technology Research Laboratories Sharp Corporation

• Tan Wei-Sin

  Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford, OX4 4GB, United Kingdom

• Heffernan Jonathan

  Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford, OX4 4GB, United Kingdom

• Takahashi Koji

  Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan

• Bousquet Valerie

  Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford, OX4 4GB, United Kingdom

• Kauer Matthias

  Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford, OX4 4GB, United Kingdom

関連論文

• Highly Reflective GaN-Based Air-Gap Distributed Bragg Reflectors Fabricated Using AllnN Wet Etching
• Blue-Violet Inner Stripe Laser Diodes Using Lattice Matched AlInN as Current Confinement Layer for High Power Operation
• InGaN-Based Blue-Violet Laser Diodes Using AlN as the Electrical Insulator

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