Highly Reflective GaN-Based Air-Gap Distributed Bragg Reflectors Fabricated Using AllnN Wet Etching
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2009-12-25
著者
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Bellanger Mathieu
Sharp Laboratories Of Europe Ltd.
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BOUSQUET Valerie
Sharp Laboratories of Europe Ltd.
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CHRISTMANN Gabriel
NanoPhotonics Centre, Cavendish Laboratory, University of Cambridge
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BAUMBERG Jeremy
NanoPhotonics Centre, Cavendish Laboratory, University of Cambridge
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KAUER Matthias
Sharp Laboratories of Europe Ltd.
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Baumberg Jeremy
Nanophotonics Centre Cavendish Laboratory University Of Cambridge
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Christmann Gabriel
Nanophotonics Centre Cavendish Laboratory University Of Cambridge
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Bousquet Valerie
Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford, OX4 4GB, United Kingdom
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Kauer Matthias
Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford, OX4 4GB, United Kingdom
関連論文
- Highly Reflective GaN-Based Air-Gap Distributed Bragg Reflectors Fabricated Using AllnN Wet Etching
- InGaN-Based Blue-Violet Laser Diodes Using AlN as the Electrical Insulator