Blue-Violet Inner Stripe Laser Diodes Using Lattice Matched AlInN as Current Confinement Layer for High Power Operation
スポンサーリンク
概要
- 論文の詳細を見る
- 2009-11-25
著者
-
Kauer Matthias
Advanced Technology Research Laboratories Sharp Corporation
-
Tsuda Yuhzoh
Electronic Components And Devices Group Sharp Corporation
-
Tan Wei-sin
Sharp Laboratories Of Europe Ltd.
-
Bousquet Valerie
Advanced Technology Research Laboratories Sharp Corporation
-
Takahashi Koji
Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632
-
Ariyoshi Akira
Electronic Components and Devices Group, Sharp Corporation, 247 Soujo, Nutanishi-cho, Mihara, Hirosh
-
Ohta Masataka
Electronic Components and Devices Group, Sharp Corporation, 247 Soujo, Nutanishi-cho, Mihara, Hirosh
-
Ohta Masataka
Electronic Components And Devices Group Sharp Corporation
-
Ariyoshi Akira
Electronic Components And Devices Group Sharp Corporation
-
Takahashi Koji
Advanced Technology Research Laboratories Sharp Corporation
-
Tan Wei-Sin
Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford, OX4 4GB, United Kingdom
関連論文
- Blue-Violet Inner Stripe Laser Diodes Using Lattice Matched AlInN as Current Confinement Layer for High Power Operation
- InGaN-Based Blue-Violet Laser Diodes Using AlN as the Electrical Insulator