Low-Temperature Crystallization of PbZr0.3Ti0.7O3 Film Induced by High-Oxygen-Pressure Processing

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A 300-nm-thick PbZr0.3Ti0.7O3 [PZT(30/70)] film was sputtered onto LaNiO3 (LNO)/Si(100) substrates at a substrate temperature of 200 °C and then annealed under an oxygen pressure of 4 MPa at 400 °C. The amorphous phase of the as-sputtered PZT(30/70) film was transformed to a highly ($h00$)-oriented perovskite phase by high-oxygen-pressure-processing (HOPP). The results of electrical measurements such as of polarization ($P$) as functions of applied electric field ($E$) ($P$–$E$ hysteresis loops), the capacitance as functions of the applied dc electric field ($C$–$E$ loops), and the dielectric constant ($\varepsilon_{\text{r}}$) and dissipation factor ($\tan\delta$) suggested that ferroelectric properties of PZT(30/70) films were largely improved by HOPP. We consider that HOPP is compatible with currently existing silicon-based technology, which is characterized by incorporating sputtering and a processing temperature limit of ${\sim}450$ °C. The $P$–$E$ hyteresis loops obtained from a prototype of $128 \times 128$ uncooled infrared detector arrays prepared by HOPP supported the good ferroelectricity with a high pyroelectric coefficient.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-09-25