Thickness Dependence of Infrared Optical Properties of LaNiO_3 Thin Films Prepared on Platinized Silicon Substrates
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-11-15
著者
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Zhao Qiang
National Laboratory For Infrared Physics Shanghai Institute Of Technical Physics Chinese Academy Of
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HU Zhigao
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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MENG Xiangjian
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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HUANG Zhiming
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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WANG Genshui
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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CHU Juhhao
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
関連論文
- Thickness Dependence of Infrared Optical Properties of LaNiO_3 Thin Films Prepared on Platinized Silicon Substrates
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- Thickness Dependence of Infrared Optical Properties of LaNiO3 Thin Films Prepared on Platinized Silicon Substrates
- Low-Temperature Crystallization of PbZr0.3Ti0.7O3 Film Induced by High-Oxygen-Pressure Processing