Reduction of Contact Resistance between Organic Semiconductor and Electrodes with Thiol-Based Self-Assembled Monolayer in Low-Density and Lying-Down Phase
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概要
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We report on a treatment of a thiol-based self-assembled monolayer with long alkyl chains on source/drain electrodes of organic thin-film transistors with a bottom-contact configuration. The performance of organic thin-film transistors such as field effect mobility and on/off ratio is improved by performing this treatment in the early stage. However, excessive treatment conversely reduces the field-effect mobility with a threshold voltage shift. We have found these results due to the difference in the density and the orientation of the thiol molecules. Thiol molecules adsorbed on source/drain electrodes in the lying-down phase cause a significant effect to reduce the contact resistance between the electrodes and a semiconductor depending on the energy barrier height at the interface.
- 2008-08-25
著者
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Ando Masahiko
Hitachi Research Laboratory Hitachi Ltd.
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Imazeki Shuji
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Oh-e Masahito
Liquid Crystal Nano-system Project, ERATO/SORST, Japan Science and Technology Agency, 5-9-9 Tokodai, Tsukuba, Ibaraki 300-2635, Japan
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Kawasaki Masahiro
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Ando Masahiko
Hitachi Cambridge Laboratory, Hitachi, Ltd., J.J. Thomson Avenue, Madingley Road, Cambridge CB3 0HE, U.K.
関連論文
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- Effects of Back-Channel Etching on the Performance of a-Si:H Thin-Film Transistors
- Structural Change during Annealing of Amorphous Indium-Tin Oxide Films Deposited by Sputtering with H_2O Addition
- Reduction of Contact Resistance between Organic Semiconductor and Electrodes with Thiol-Based Self-Assembled Monolayer in Low-Density and Lying-Down Phase