Failure Analysis of Ge2Sb2Te5 Based Phase Change Memory

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概要

• 論文の詳細を見る

• A phase change memory device, consisting of Ge2Sb2Te5 chalcogenide, a Mo electrode and a SiO2 dielectric layer, was fabricated in order to investigate the failure mechanism. During the pulsed mode switching of the device with a reset pulse (5.0 V, 90 ns) and a set pulse (1.5 V, 30 μs), some devices failed to reset stuck. Those reset stuck devices showed a delaminated interface with decomposed Ge2Sb2Te5 chalcogenide. A thin layer of elemental Te or a Te rich phase was observed at the interface. A working device, switched over 600 times, shows no delamination between Ge2Sb2Te5 chalcogenide and the Mo electrode and no sign of decomposition.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-05-25

著者

• Lee Heon

  Division of Materials Science and Engineering, Korea University, Seoul 136-701, Korea

• Hong Sung-Hoon

  Division of Materials Science and Engineering, Korea University, Seoul 136-701, Korea

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