Improvement of Metal–Insulator–Semiconductor-Type Organic Light-Emitting Transistors
スポンサーリンク
概要
- 論文の詳細を見る
We developed metal–insulator–semiconductor-type organic light-emitting transistors (MIS-OLETs), and improved their properties by optimizing the device structure. MIS-OLETs showed a maximum drain current of $I_{\text{D}} = -149$ μA, maximum luminance of 1034 cd/m2 ($V_{\text{D}} = -20$ V, $V_{\text{G}} = -50$ V) and on/off ratio of over $10^{4}$. Moreover an active-matrix display using MIS-OLETs on a plastic substrate was fabricated. The developed $16\times 16$ active-matrix-drive organic light-emitting transistors (AMOLET) showed excellent properties by optimizing device structure.
- 2008-03-25
著者
-
Kudo Kazuhiro
Faculty Of Engineering Chiba University
-
Nakamura Kenji
Corporate R&d Laboratories Pioneer Corporation
-
Yoshizawa Atsushi
Corporate Research and Development Laboratories, Pioneer Corporation, Fujimi, Tsurugashima, Saitama 350-2288, Japan
-
Endo Hiroyuki
Fundamental and Environmental Research Laboratories, NEC Corporation, Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
-
Hata Takuya
Corporate Research and Development Laboratories, Pioneer Corporation, Fujimi, Tsurugashima, Saitama 350-2288, Japan
-
Obata Katsunari
Research and Development Center, Dai Nippon Printing, Wakashiba, Kashiwa, Chiba 277-0871, Japan
-
Nakamura Kenji
Corporate Research and Development Laboratories, Pioneer Corporation, Fujimi, Tsurugashima, Saitama 350-2288, Japan
-
Kudo Kazuhiro
Faculty of Engineering, Chiba University, Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
関連論文
- Study of Hydrogen Vacuum-Ultraviolet Light Sources for Submicron Lithography : Lithography Technology
- Study of Hydrogen Vacuum-Ultraviolet Light Sources for Submicron Lithography
- Absorption Coefficient and Sensitivity of Positive and Negative Resists in the Vacuum Ultraviolet Region
- High Quantum Efficiency in Organic Light-Emitting Devices with Iridium-Complex as a Triplet Emissive Center
- Nanometer Pattern Transfer by VUV Lithography with a D_2 Lamp : Lithography Technology
- Nanometer Pattern Transfer by VUV Lithography with a D_2 Lamp
- The Initial Growth Stage of the InAs Quantum Well Structures on Variously Oriented GaAs Substrates
- Fabrication of vertical organic light emitting transistor using thin-film ZnO
- Inelastic Electron Tunneling Spectroscopy and Optical Characterization of TMPD Adsorbed C_nTCNQ Langmuir-Blodgett Films (Special Section on Organic Functional Devices)
- Inelastic Electron Tunneling Spectroscopy of Langmuir-Blodgett Monolayers on Silicon Substrate
- Improvement of Metal–Insulator–Semiconductor-Type Organic Light-Emitting Transistors