Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition of Borophosphosilicate Glass Films

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概要

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• Borophosphosilicate glass (BPSG) films have been grown on silicon wafers by plasma enhanced chemical vapor deposition at atmospheric pressure (AP-PECVD). Tetraethoxysilane (TEOS), triethylborate (TEB), and trimethylphosphite (TMPI) were adopted as precursors, and argon and oxygen were respectively used as the carrier and reactive gases to produce stable plasma at atmospheric pressure. Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and refractive index and stress measurements were employed to characterize BPSG films. The effects of input radio-frequency (RF) power and precursor (TEB and TMPI) flow rate on deposition rate were studied. Results indicated that the deposition rate of BPSG films increases with increasing input RF power and precursor flow rate. In addition, reactive gaseous species were detected by optical emission spectroscopy to reveal the possible reaction process of BPSG film deposition.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-03-25

著者

• Zhao Lingli

  Institute of Microelectronics, Chinese Academy of Science, 100029 Beijing, China

• Xu Xiangyu

  Academy of Opto-electronics, Chinese Academy of Science, Beijing 100010, China

• Wang Shouguo

  Academy of Opto-electronics, Chinese Academy of Science, Beijing 100010, China

• Yin Minghui

  Physics Department, Sichuan University, Chengdu 610064, China

• Zhao Lingli

  Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China

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