Dielectric Relaxations in the Ce1-xYbxO2-δ System

概要

論文の詳細を見る
The dielectric properties of Yb-doped CeO2 (Ce1-xYbxO2-δ) which is an oxide-ion conductor were investigated. Numerical analysis of the frequency dependences of dielectric constants ($\varepsilon'$) and dielectric loss factors ($\varepsilon''$) revealed that the dielectric characteristics can be successfully explained by the superimposition of both Debye-type polarization due to dopant-vacancy associates and electrolyte–electrode interfacial polarization. The temperature response of the dielectric properties was less active than that of the Sm- or Nd-doped CeO2 systems, which have higher oxide-ion conductivity than the present system. Three types of Debye-type polarizations were observed. The first polarization at the highest-frequency region was ascribed to a long-range migration of oxygen vacancies. The second and third polarizations at the lower-frequency region were ascribed to the dopant-vacancy associates. The observed values of $\sigma_{\text{ac}}$ and $\tan\delta$ were also successfully explained using the dielectric parameters that were obtained from the numerical analysis of dielectric constant.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-01-25