Study on X-ray Absorption Near Edge Structure of Eu Centers in CaAl2O4:Eu Phosphor Thin Films Prepared by Pulsed Laser Deposition
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概要
- 論文の詳細を見る
X-ray absorption fine structure and photoluminescence studies of CaAl2O4:Eu phosphor thin films prepared by pulse laser deposition have been carried out. The ratio of the Eu2+/Eu3+ content is estimated from the Eu-LIII edge X-ray absorption near-edge structure spectra. It has been found that Eu2+ predominates in the as-deposited films. The ratio of Eu2+ is further increased to 95% by post-annealing only for the films deposited under an almost stoichiometric condition in the laser-induced plasma, which is crystallized as CaAl2O4 and emits blue light due to Eu2+ in CaAl2O4 crystal. For the film deposited under a non-stoichiometric condition, The Eu3+ ratio is increased by post-annealing even in a reducing atmosphere, resulting in poor luminescence intensity and a color shift of Eu2+.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-09-15
著者
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Honma Tetsuo
Japan Synchrotron Radiation Res. Inst. Hyogo Jpn
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Ohmi Koutoku
Department Electrical And Electronic Engineering Tottori University
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Yamane Akira
Department Of Biophysics Tsurumi University School Of Dental Medicine
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Kakehi Ken-nosuke
Department Of Electrical And Electronic Engineering Tottori University
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Kobayashi Hiroshi
Department Of Applied Physics School Of Science And Engineering Waseda University
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Kunimoto Takashi
Department of Electrical and Electronic Engineering, Tottori University, 4-101, Koyama-Minami, Tottori, Tottori 680-8552, Japan
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Yamane Akira
Department of Electrical and Electronic Engineering, Tottori University, Tottori 680-8552, Japan
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Shao Yan-Lin
Department of Electrical and Electronic Engineering, Tottori University, Tottori 680-8552, Japan
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Honma Tetsuo
Japan Synchrotron Radiation Research Institute, Sayo, Hyogo 679-5198, Japan
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Kobayashi Hiroshi
Department of Nano Material and Bio Engineering, Tokushima Bunri University, Sanuki, Kagawa 769-2193, Japan
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Kakehi Ken-nosuke
Department of Electrical and Electronic Engineering, Tottori University, Tottori 680-8552, Japan
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