Nanohole Arrays with Sub-30 nm Diameter Formed on GaAs Using Nanoporous Alumina Mask
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概要
- 論文の詳細を見る
Nanohole arrays with a sub-30 nm diameter were formed on GaAs substrates by inductively coupled plasma reactive-ion etching (ICP-RIE) using nanoporous alumina films as transfer masks. Whether the pore configurations of the alumina masks were transferred onto the GaAs substrates depended on the exposure time of ICP-RIE. In spite of the sub-30 nm pore diameter of the alumina masks, the ion bombardment induced in SiCl4/Ar gas by ICP-RIE properly responded on the GaAs substrate through the pores of the alumina masks. ICP-RIE using nanoporous alumina masks can be used as a prospective method to produce nanostructures.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-07-15
著者
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LEE Seok
Photonic Research Center, Korea Institute of Science and Technology
-
Jhon Young
Photonics Research Center Kist
-
Mho Sun-il
Division Of Energy Systems Research Ajou University
-
Jung Mi
Photonic Research Center, Korea Institute of Science and Technology, Seoul 110-756, Republic of Korea
-
Cho Jae-won
Department of Electrophysics, Kwangwoon University, Seoul 139-701, Korea
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Jhon Young
Photonics Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea
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Woo Deokha
Photonics Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea
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