Enhanced Light Extraction from Nanoporous Surfaces of InGaN/GaN-Based Light Emitting Diodes
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概要
- 論文の詳細を見る
The authors fabricated anodic alumina by a two-step anodization process for samples of an Al foil template and an Al deposited film in order to form nanopores on the p-GaN surfaces of InGaN/GaN multi-quantum-well (MQW) light-emitting diodes (LEDs). The GaN nanopores formed by nanopatterning with the alumina template in an inductively coupled plasma dry etching process shows enhanced light extraction at a wavelength of 450 nm. The nanoporous alumina anodized from the deposited Al layer has a channel to allow the flow of electrolytes into the GaN surface and results in the surface etching effect showing light enhancement at 474 nm. The significant enhancement of light extraction has been correlated with the nanoscaled roughness of a randomly distributed and nanoporous p-GaN surface.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-10-15
著者
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WOO Deok
Photonic Research Center, Korea Institute of Science and Technology
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Woo Deok
Photonic Research Center, Korea Institute of Science and Technology, Seoul 110-756, Republic of Korea
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Kim Keunjoo
Department of Mechanical Engineering and Research Center for Industrial Technology, Chonbuk National University, Jeonju 561-756, Republic of Korea
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Choi Jaeho
Department of Mechanical Engineering and Research Center for Industrial Technology, Chonbuk National University, Jeonju 561-756, Republic of Korea
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Bae Tae
Jeonju Center, Korea Basic Science Institute, Jeonju 561-756, Republic of Korea
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Jung Mi
Photonic Research Center, Korea Institute of Science and Technology, Seoul 110-756, Republic of Korea
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