Thermoelectric Properties of P-doped Mg2Si Semiconductors

概要

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The thermoelectric properties of P-doped Mg2Si [$\text{Mg$_{2}$Si}:\text{P}=1:x$ ($0.0005\leqq x\leqq 0.03$)] fabricated by spark plasma sintering have been characterized by Hall effect measurements at 300 K and by measurements of electrical resistivity ($\rho$), the Seebeck coefficient ($S$), and thermal conductivity ($\kappa$) between 300 and 900 K. P-doped Mg2Si samples are $n$-type in the measured temperature range. The electron concentration of P-doped Mg2Si at 300 K ranges from $6.7\times 10^{18}$ for the P concentration of $x=0.0005$, to $3.1\times 10^{19}$ cm-3 for $x=0.03$. First-principles calculation revealed that P atoms are expected to be primarily located at the Si sites in Mg2Si. $\rho$ and $S$ are strongly affected by $x$, but $\kappa$ does not depend on $x$. The sample $x=0.03$ shows a maximum value of the figure of merit $ZT$ of 0.33 at 865 K.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-06-15