Hall Effect and Thermoelectric Properties of EfSi_x
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-03-15
著者
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TANI Jun-ichi
Department of inorganic Chemistry, Osaka Municipal Technical Research institute
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KIDO Hiroyasu
Department of inorganic Chemistry, Osaka Municipal Technical Research institute
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Kido Hiroyasu
Department Of Inorganic Chemistry Osaka Municipal Technical Research Institute
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Kido Hiroyasu
Department Of Inorganic Chemistry Osaka Municipal Technical Reseach Institute
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Tani Jun-ichi
Department Of Inorganic Chemistry Osaka Municipal Technical Research Institute
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Kido Hiroyasu
Department Of Industrial Chemistry Tokyo Metropolitan University
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Tani Jun-ichi
Department of Electronic Materials, Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553, Japan
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Kido Hiroyasu
Department of Electronic Materials, Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553, Japan
関連論文
- Geometrical and Electronic Structures of β-FeSi_X_ (X = B, N, Al or P)
- Hall Effect and Thermoelectric Properties of EfSi_x
- Thermoelectric Properties of $\beta$-Fe1-xCoxSi2 Semiconductors
- Electrical Properties of Cr-Doped β-FeSi_2
- Structure of Nascent Microbial Cellulose IV. Influence of Size and Substitution Groups of Direct Dye on Nascent Microbial Cellulose
- Thermoelectric Properties of P-doped Mg2Si Semiconductors