Electrical Properties of Cr-Doped β-FeSi_2

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概要

• 論文の詳細を見る

• The Hall effect and electrical resistivity of iron disilicide Fe_<1-x>Cr_xSi_2 (0.01 ≦ x ≦ 0.05) have been measured in the temperature range between 80 and 300 K. The solid solution Fe_<1-x>Cr_xSi_2 is p-type over the measured temperature range. The hole concentration of Fe_<1-x>Cr_xSi_2 at 300 K ranges from 8.9×10^<18>cm^<-3> for x = 0.01 to 1.1×10^<20>cm^<-3> for x = 0.05, which is one order of magnitude higher than that of Fe_<1-x>Mn_xSi_2. The temperature dependence of the mobility of the composition range 0.03 ≦ x ≦ 0.05 can be explained by using the small polaron model.

• 社団法人応用物理学会の論文
• 1999-05-15

著者

• Tani Jun-ichi

  Department Of Inorganic Chemistry Osaka Municipal Technical Research Institute

• Kido H

  Osaka Municipal Technical Res. Inst. Osaka‐shi

• Kido Hiroyasu

  Department Of Industrial Chemistry Tokyo Metropolitan University

• Tani J

  Osaka Municipal Technical Res. Inst. Osaka Jpn

• Tani Jun-ichi

  Department of Electronic Materials, Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553, Japan

• Kido Hiroyasu

  Department of Electronic Materials, Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553, Japan

関連論文

• Geometrical and Electronic Structures of β-FeSi_X_ (X = B, N, Al or P)
• Hall Effect and Thermoelectric Properties of EfSi_x
• Thermoelectric Properties of $\beta$-Fe1-xCoxSi2 Semiconductors
• Electrical Properties of Cr-Doped β-FeSi_2
• Structure of Nascent Microbial Cellulose IV. Influence of Size and Substitution Groups of Direct Dye on Nascent Microbial Cellulose
• Thermoelectric Properties of P-doped Mg2Si Semiconductors

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