Fabrication of Vertical Organic Light-Emitting Transistor Using ZnO Thin Film

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概要

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• Organic light-emitting diodes (OLEDs) combined with thin film transistor (TFT) are well suitable elements for low-cost, large-area active matrix displays. On the other hand, zinc oxide (ZnO) is a transparent material and its electrical conductivity is controlled from conductive to insulating by growth conditions. The drain current of ZnO FET is 180 μA. The OLED uses ZnO thin film (Al-doped) for the electron injection layer and is controlled by radio frequency (rf) and direct current (dc) sputtering conditions, such as Al concentration and gas pressure. Al concentration in the ZnO film and deposition rate have strong effects on electron injection. Furthermore, the OLED driven by ZnO FET shows a luminance of 13 cd/m2, a luminance efficiency of 0.7 cd/A, and an on-off ratio of 650.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-30

著者

• Iizuka Masaaki

  Department Of Electronics And Mechanical Engineering Chiba University

• Kudo Kazuhiro

  Department Of Clinical Pathology Hakodate Municipal Hospital

• Yamauchi Hiroshi

  Department Of Chemistry Faculty Of Science Kanazawa University

• Iizuka Masaaki

  Department of Electronics and Mechanical Enginnering, Faculty of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

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