Injection-Avalanche-Based n+pn Silicon Complementary Metal–Oxide–Semiconductor Light-Emitting Device (450–750 nm) with 2-Order-of-Magnitude Increase in Light Emission Intensity

スポンサーリンク

概要

• 論文の詳細を見る

• In this paper, we report on an increase in emission intensity of up to 10 nW/μm2 that has been realized with a new novel two junction, diagonal avalanche control, and minority carrier injection silicon complementary metal–oxide–semiconductor (CMOS) light emitting device (LED). The device utilizes a four-terminal configuration with two embedded shallow n+p junctions in a p substrate. One junction is kept in deep-avalanche and light-emitting mode, while the other junction is forward biased and minority carrier electrons are injected into the avalanching junction. The device has been realized using standard 0.35 μm CMOS design rules and fabrication technology and operates at 9 V in the current range 0.1–3 mA. The optical output power is about one order of magnitude higher for previous single-junction n+p light-emitting devices while the emission intensity is about two orders of magnitude higher than for single-junction devices. The optical output is about three orders of magnitude higher than the low-frequency detectivity limit of silicon p–i–n detectors of comparable dimensions. The realized characteristics may enable diverse optoelectronic applications in standard-CMOS-silicon-technology-based integrated circuitry.

• 2007-04-30

著者

• Snyman Lukas

  Department of Electrical Engineering, Tshwane University of Technology, PO Box X680, Pretoria 0001, South Africa

• Aharoni Herzl

  Department of Electrical and Computer Engineering, Ben Gurion University of the Negev, Beer-Sheva 84105, Israel

• du Plessis

  Carl and Emily Fuchs Institute of Microelectronics, University of Pretoria, Pretoria 0002, South Africa

関連論文

• A Comparative Examination of Ion Implanted n^+p Junctions Annealed at 1000℃ and 450℃
• Effect of Substrate Boron Concentration on the Integrity of 450℃-Annealed Ion-Implanted Junctions
• Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O_2/N_2 Plasma
• Injection-Avalanche-Based n+pn Silicon Complementary Metal–Oxide–Semiconductor Light-Emitting Device (450–750 nm) with 2-Order-of-Magnitude Increase in Light Emission Intensity

スポンサーリンク